Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water

Riikka L. Puurunen*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

71 Citations (Scopus)

Abstract

The growth-per-cycle (GPC) in the trimethylaluminum/water atomic layer deposition (ALD) process is shown to be quantitatively correlated with the surface OH group concentration before the trimethylaluminum reaction. The correlation corresponds to a reaction chemistry, where several types of gas-solid reactions (ligand exchange, dissociation/association) can occur simultaneously, and where steric hindrance by adsorbed methyl groups terminates the trimethylaluminum reaction. The commonly assumed reaction chemistry where one OH group bonds one aluminum atom through ligand exchange does not describe satisfactorily the trimethylaluminum/water process, and should perhaps not be expected to describe other ALD processes either.

Original languageEnglish
Pages (from-to)6-10
Number of pages5
JournalApplied Surface Science
Volume245
Issue number1-4
DOIs
Publication statusPublished - 30 May 2005
MoE publication typeA1 Journal article-refereed

Keywords

  • Aluminum oxide
  • Atomic layer deposition
  • High-κ dielectrics
  • Mechanism

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