Correlating integrated circuit process induced strain and defects against device yield and process control monitoring data

Research output: Contribution to journalArticle

Researchers

  • M. Karilahti
  • T. Tuomi
  • R. Rantamäki
  • P.J. McNally
  • A.N. Danilewsky

Research units

Details

Original languageEnglish
Pages (from-to)445-449
JournalJournal of Materials Science: Materials in Electronics
Issue number14
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

    Research areas

  • defects, device yield, integrated circuits, silicon

ID: 4152346