Correlating integrated circuit process induced strain and defects against device yield and process control monitoring data

M. Karilahti, T. Tuomi, R. Rantamäki, P.J. McNally, A.N. Danilewsky

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)445-449
    JournalJournal of Materials Science: Materials in Electronics
    Issue number14
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed


    • defects
    • device yield
    • integrated circuits
    • silicon

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