Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se2 Solar Cells

Rouin Farshchi; Jeff Bailey; Dmitry Poplavskyy; Benjamin Hickey; David Spaulding; En Tang Kuan; Afrina Khanam; Filip Tuomisto

doi:10.1109/PVSC40753.2019.8980772

Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells

Rouin Farshchi
, Jeff Bailey
, Dmitry Poplavskyy
, Benjamin Hickey
, David Spaulding
, En Tang Kuan
, Afrina Khanam
, Filip Tuomisto

Department of Applied Physics

MiaSolé Hi-Tech Corp.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.

Original language	English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	IEEE
Pages	3198-3200
Number of pages	3
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980772
Publication status	Published - 1 Jun 2019
MoE publication type	A4 Conference publication
Event	IEEE Photovoltaic Specialists Conference - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 Conference number: 46

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	IEEE Photovoltaic Specialists Conference
Abbreviated title	IEEE PVSC
Country/Territory	United States
City	Chicago
Period	16/06/2019 → 21/06/2019

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

ACIGS
defects
photovoltaic cells
positron annihilation
potassium
reactive sputtering
vacancies

Access to Document

10.1109/PVSC40753.2019.8980772

Cite this

Farshchi, R., Bailey, J., Poplavskyy, D., Hickey, B., Spaulding, D., Kuan, E. T., Khanam, A., & Tuomisto, F. (2019). Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 3198-3200). Article 8980772 (Conference Record of the IEEE Photovoltaic Specialists Conference). IEEE. https://doi.org/10.1109/PVSC40753.2019.8980772

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title = "Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se2 Solar Cells",

abstract = "We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.",

keywords = "ACIGS, defects, photovoltaic cells, positron annihilation, potassium, reactive sputtering, vacancies",

author = "Rouin Farshchi and Jeff Bailey and Dmitry Poplavskyy and Benjamin Hickey and David Spaulding and Kuan, \{En Tang\} and Afrina Khanam and Filip Tuomisto",

year = "2019",

month = jun,

day = "1",

doi = "10.1109/PVSC40753.2019.8980772",

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note = "IEEE Photovoltaic Specialists Conference, IEEE PVSC ; Conference date: 16-06-2019 Through 21-06-2019",

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Farshchi, R, Bailey, J, Poplavskyy, D, Hickey, B, Spaulding, D, Kuan, ET, Khanam, A & Tuomisto, F 2019, Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980772, Conference Record of the IEEE Photovoltaic Specialists Conference, IEEE, pp. 3198-3200, IEEE Photovoltaic Specialists Conference, Chicago, Illinois, United States, 16/06/2019. https://doi.org/10.1109/PVSC40753.2019.8980772

Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells. / Farshchi, Rouin; Bailey, Jeff; Poplavskyy, Dmitry et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. IEEE, 2019. p. 3198-3200 8980772 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Farshchi, Rouin

AU - Bailey, Jeff

AU - Poplavskyy, Dmitry

AU - Hickey, Benjamin

AU - Spaulding, David

AU - Kuan, En Tang

AU - Khanam, Afrina

AU - Tuomisto, Filip

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N2 - We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.

AB - We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.

KW - ACIGS

KW - defects

KW - photovoltaic cells

KW - positron annihilation

KW - potassium

KW - reactive sputtering

KW - vacancies

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