Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se2 Solar Cells
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
- MiaSolé Hi-Tech Corp.
We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.
|Title of host publication||2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019|
|Publication status||Published - 1 Jun 2019|
|MoE publication type||A4 Article in a conference publication|
|Event||IEEE Photovoltaic Specialists Conference - Chicago, United States|
Duration: 16 Jun 2019 → 21 Jun 2019
Conference number: 46
|Name||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Conference||IEEE Photovoltaic Specialists Conference|
|Period||16/06/2019 → 21/06/2019|
- ACIGS, defects, photovoltaic cells, positron annihilation, potassium, reactive sputtering, vacancies