Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se2 Solar Cells

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

Research units

  • MiaSolé Hi-Tech Corp.

Abstract

We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.

Details

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publication statusPublished - 1 Jun 2019
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference - Chicago, United States
Duration: 16 Jun 201921 Jun 2019
Conference number: 46

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
CountryUnited States
CityChicago
Period16/06/201921/06/2019

    Research areas

  • ACIGS, defects, photovoltaic cells, positron annihilation, potassium, reactive sputtering, vacancies

ID: 41911201