Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • RAS - Ioffe Physico Technical Institute

Abstract

Various techniques for morphological evolution of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition have been evaluated. Atomic force microscopy, photoluminescence (PL) and X-ray diffraction measurements have been used for characterization. It is shown that inclusions, that are generated into the V-defects in the InGaN quantum wells (QW), can be removed by introducing a small amount of hydrogen during the growth of GaN barriers. This hydrogen treatment results in partial loss of indium from the QWs, but smooth surface morphology of the MQW structure and improved optical quality of InGaN wells are obtained. The density of the V-defects could be reduced by reducing the dislocation density of the underlying GaN buffer. © 2007 Elsevier B.V. All rights reserved.

Details

Original languageEnglish
Pages (from-to)324-329
Number of pages6
JournalJournal of Crystal Growth
Volume300
Issue number2
Publication statusPublished - 15 Mar 2007
MoE publication typeA1 Journal article-refereed

    Research areas

  • A3. Metalorganic chemical vapor deposition, B1. InGaN, B1. Quantum wells

ID: 3475655