Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Sami Suihkonen*, Teemu Lang, Olli Svensk, Jaakko Sormunen, Pekka Törmä, Markku Sopanen, Harri Lipsanen, Maxim Odnoblyudov, Vladislav Bougrov

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    31 Citations (Scopus)

    Abstract

    Various techniques for morphological evolution of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition have been evaluated. Atomic force microscopy, photoluminescence (PL) and X-ray diffraction measurements have been used for characterization. It is shown that inclusions, that are generated into the V-defects in the InGaN quantum wells (QW), can be removed by introducing a small amount of hydrogen during the growth of GaN barriers. This hydrogen treatment results in partial loss of indium from the QWs, but smooth surface morphology of the MQW structure and improved optical quality of InGaN wells are obtained. The density of the V-defects could be reduced by reducing the dislocation density of the underlying GaN buffer. © 2007 Elsevier B.V. All rights reserved.

    Original languageEnglish
    Pages (from-to)324-329
    Number of pages6
    JournalJournal of Crystal Growth
    Volume300
    Issue number2
    DOIs
    Publication statusPublished - 15 Mar 2007
    MoE publication typeA1 Journal article-refereed

    Keywords

    • A3. Metalorganic chemical vapor deposition
    • B1. InGaN
    • B1. Quantum wells

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