TY - JOUR
T1 - Contactless read-out of printed memory
AU - Allen, Mark
AU - Aronniemi, Mikko
AU - Mattila, Tomi
AU - Helistö, Panu
AU - Sipola, Hannu
AU - Rautiainen, Anssi
AU - Leppäniemi, Jaakko
AU - Alastalo, Ari
AU - Korhonen, Raimo
AU - Seppä, Heikki
PY - 2011/9
Y1 - 2011/9
N2 - Contactless read-out of inkjet printed programmable memory is demonstrated. The memory is arranged as a conducting comb pattern consisting of parallel lines adjacent to a common electrode. The information content of the memory is stored in memory bits, which modulate the electrical surface-area of the lines. The data is read-out capacitively by sweeping the tip of a printed circuit board over the memory. The memory bits were printed using silver nanoparticle ink and switched from an initial, high-resistance state to a low-resistance state using rapid electrical sintering, and furthermore, from the low-resistance state to an open-circuit state via fuse-like action. This read-out approach offers potential for low-cost memory applications as well as e.g. resistance-change sensors.
AB - Contactless read-out of inkjet printed programmable memory is demonstrated. The memory is arranged as a conducting comb pattern consisting of parallel lines adjacent to a common electrode. The information content of the memory is stored in memory bits, which modulate the electrical surface-area of the lines. The data is read-out capacitively by sweeping the tip of a printed circuit board over the memory. The memory bits were printed using silver nanoparticle ink and switched from an initial, high-resistance state to a low-resistance state using rapid electrical sintering, and furthermore, from the low-resistance state to an open-circuit state via fuse-like action. This read-out approach offers potential for low-cost memory applications as well as e.g. resistance-change sensors.
KW - Contactless read-out
KW - Inkjet
KW - Nanoparticle ink
KW - Non-volatile memory
KW - Rapid electrical sintering
UR - http://www.scopus.com/inward/record.url?scp=80051549531&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2011.04.026
DO - 10.1016/j.mee.2011.04.026
M3 - Article
AN - SCOPUS:80051549531
SN - 0167-9317
VL - 88
SP - 2941
EP - 2945
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 9
ER -