Composition-dependent band gap and band-edge bowing in AIInN: A combined theoretical and experimental study

Research output: Contribution to journalArticle

Researchers

  • Stefan Schulz
  • PhD Miguel A. Caro

  • Lay Theng Tan
  • Peter J. Parbrook
  • Robert W. Martin
  • Eoin P. O'Reilly

Research units

  • University College Cork
  • Nanyang Technological University
  • Tyndall National Institute

Abstract

A combined experimental and theoretical study of the band gap of AllnN is presented, which confirms the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition-dependent bowing parameters for these quantities are extracted. Additionally, composition-dependent band offsets for GaN/AllnN systems are provided. We show that local strain and built-in fields affect the band edges significantly, leading to optical polarization switching at a much lower In composition than expected from a VCA approach.

Details

Original languageEnglish
Article number121001
JournalAPPLIED PHYSICS EXPRESS
Volume6
Issue number12
Publication statusPublished - Dec 2013
MoE publication typeA1 Journal article-refereed

ID: 9834672