Projects per year
Abstract
This paper presents a novel low-complexity method to characterize the permittivities of low-loss dielectric slabs at millimeter-wave and sub-terahertz bands. The method assumes plane-wave illumination of the material under test and utilizes reflected fields on two air-material interfaces, resolved through a sufficiently wide-band measurement. Unlike conventional methods, it does not need a reference measurement using a metal plate and a back metal plate. The applicability of the method is discussed. The misalignment of a reference plane and the effects of the gap between the back metal and the material under test are analyzed for published reflected-field based methods to show the advantages of the method. Finally, the proposed method is applied to estimate the permittivities of both plexiglass with 30 mm thickness and nylon with 21 mm thickness across 140-210 GHz and compared against the free-space transmission method, showing good agreement. The proposed method is suitable for permittivity characterization of low-loss materials when a wide-band plane-wave measurement is possible.
Original language | English |
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Article number | 10716426 |
Pages (from-to) | 150693-150701 |
Number of pages | 9 |
Journal | IEEE Access |
Volume | 12 |
DOIs | |
Publication status | Published - 14 Oct 2024 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Accuracy
- Complexity theory
- Dielectrics
- Metals
- Optical waveguides
- Permittivity
- Permittivity measurement
- Reflection
- Terahertz materials
- Transmitting antennas
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Dive into the research topics of 'Complex Permittivity Characterization of Low-Loss Dielectric Slabs at Sub-THz'. Together they form a unique fingerprint.Projects
- 1 Finished
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AKA-NSF-Haneda: Impact of user, environment, and artificial surfaces on above-100 GHz wireless communications
Haneda, K. (Principal investigator)
01/01/2022 → 31/12/2024
Project: Academy of Finland: Other research funding
Equipment
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Aalto Electronics-ICT
Ryynänen, J. (Manager)
Department of Electronics and NanoengineeringFacility/equipment: Facility