Compensation in Be-doped gallium nitride grown using molecular beam epitaxy

Kyoungnae Lee; B. Vanmil; M. Luo; T. H. Myers; A. Armstrong; S. A. Ringel; M. Rummukainen; K. Saarinen

Compensation in Be-doped gallium nitride grown using molecular beam epitaxy

Kyoungnae Lee^*, B. Vanmil, M. Luo, T. H. Myers, A. Armstrong, S. A. Ringel, M. Rummukainen, K. Saarinen

^*Corresponding author for this work

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

Abstract

Three techniques to improve beryllium doping in Ga-polar GaN grown by molecular beam epitaxy were investigated: growth under atomic hydrogen, growth under electron irradiation, and growth under an In flux. The samples were characterized by photoluminescence and Hall effect measurements. None of these approaches led to enhanced Be activation. Optical evidence that the Be activation energy may be about 190 meV is presented. Selected samples were also characterized using positron annihilation spectroscopy in an attempt to correlate compensation and PL features with microscopic defects. Positron annihilation spectroscopy (PAS) studies suggest that gallium vacancies and/or gallium vacancy complexes may be related to compensation in beryllium doped gallium nitride samples. There is a correlation between donor-acceptor pair photoluminescence at 3.38eV, beryllium concentration, and yellow-red photoluminescence at 2.0 to 2.1 eV.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	729-734
Number of pages	6
Publication status	Published - 15 May 2006
MoE publication type	A4 Conference publication
Event	Materials Research Society Fall Meeting - Boston, United States Duration: 28 Nov 2005 → 2 Dec 2005

Conference

Conference	Materials Research Society Fall Meeting
Abbreviated title	MRS
Country/Territory	United States
City	Boston
Period	28/11/2005 → 02/12/2005

Cite this

@inproceedings{82822145e60344dbaf5da5f2a9d5f061,

title = "Compensation in Be-doped gallium nitride grown using molecular beam epitaxy",

abstract = "Three techniques to improve beryllium doping in Ga-polar GaN grown by molecular beam epitaxy were investigated: growth under atomic hydrogen, growth under electron irradiation, and growth under an In flux. The samples were characterized by photoluminescence and Hall effect measurements. None of these approaches led to enhanced Be activation. Optical evidence that the Be activation energy may be about 190 meV is presented. Selected samples were also characterized using positron annihilation spectroscopy in an attempt to correlate compensation and PL features with microscopic defects. Positron annihilation spectroscopy (PAS) studies suggest that gallium vacancies and/or gallium vacancy complexes may be related to compensation in beryllium doped gallium nitride samples. There is a correlation between donor-acceptor pair photoluminescence at 3.38eV, beryllium concentration, and yellow-red photoluminescence at 2.0 to 2.1 eV.",

author = "Kyoungnae Lee and B. Vanmil and M. Luo and Myers, {T. H.} and A. Armstrong and Ringel, {S. A.} and M. Rummukainen and K. Saarinen",

year = "2006",

month = may,

day = "15",

language = "English",

isbn = "1558998462",

pages = "729--734",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Materials Research Society Fall Meeting, MRS ; Conference date: 28-11-2005 Through 02-12-2005",

}

TY - GEN

T1 - Compensation in Be-doped gallium nitride grown using molecular beam epitaxy

AU - Lee, Kyoungnae

AU - Vanmil, B.

AU - Luo, M.

AU - Myers, T. H.

AU - Armstrong, A.

AU - Ringel, S. A.

AU - Rummukainen, M.

AU - Saarinen, K.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - Three techniques to improve beryllium doping in Ga-polar GaN grown by molecular beam epitaxy were investigated: growth under atomic hydrogen, growth under electron irradiation, and growth under an In flux. The samples were characterized by photoluminescence and Hall effect measurements. None of these approaches led to enhanced Be activation. Optical evidence that the Be activation energy may be about 190 meV is presented. Selected samples were also characterized using positron annihilation spectroscopy in an attempt to correlate compensation and PL features with microscopic defects. Positron annihilation spectroscopy (PAS) studies suggest that gallium vacancies and/or gallium vacancy complexes may be related to compensation in beryllium doped gallium nitride samples. There is a correlation between donor-acceptor pair photoluminescence at 3.38eV, beryllium concentration, and yellow-red photoluminescence at 2.0 to 2.1 eV.

AB - Three techniques to improve beryllium doping in Ga-polar GaN grown by molecular beam epitaxy were investigated: growth under atomic hydrogen, growth under electron irradiation, and growth under an In flux. The samples were characterized by photoluminescence and Hall effect measurements. None of these approaches led to enhanced Be activation. Optical evidence that the Be activation energy may be about 190 meV is presented. Selected samples were also characterized using positron annihilation spectroscopy in an attempt to correlate compensation and PL features with microscopic defects. Positron annihilation spectroscopy (PAS) studies suggest that gallium vacancies and/or gallium vacancy complexes may be related to compensation in beryllium doped gallium nitride samples. There is a correlation between donor-acceptor pair photoluminescence at 3.38eV, beryllium concentration, and yellow-red photoluminescence at 2.0 to 2.1 eV.

UR - http://www.scopus.com/inward/record.url?scp=33646414793&partnerID=8YFLogxK

M3 - Conference article in proceedings

AN - SCOPUS:33646414793

SN - 1558998462

SN - 9781558998469

SP - 729

EP - 734

BT - Materials Research Society Symposium Proceedings

T2 - Materials Research Society Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

Compensation in Be-doped gallium nitride grown using molecular beam epitaxy

Abstract

Conference

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