Compensating vacancy defects in Sn- and Mg-doped In2O3

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of California at Santa Barbara
  • Paul Drude Institute for Solid State Electronics
  • Leibniz Institute for Crystal Growth

Abstract

MBE-grown Sn- and Mg-doped epitaxial In2O3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In2O3, however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.

Details

Original languageEnglish
Article number245307
Pages (from-to)1-7
Number of pages7
JournalPhysical Review B
Volume90
Issue number24
Publication statusPublished - Dec 2014
MoE publication typeA1 Journal article-refereed

    Research areas

  • In2O3, positron, vacancy

Download statistics

No data available

ID: 819347