Compensating point defects in 4He+- irradiated InN

Filip Tuomisto, A. Pelli, K.M. Yu, W. Walukiewicz, W.J. Schaff

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Abstract

We use positron annihilation spectroscopy to study 2MeV 4He+-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600cm−1. The In vacancies are introduced at a significantly lower rate of 100cm−1, making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the other hand, negative non-open volume defects are introduced at a rate higher than 2000cm−1. These defects are tentatively attributed to interstitial nitrogen and may ultimately limit the free-electron concentration at high irradiation fluences.
Original languageEnglish
Article number193201
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B
Volume75
Issue number19
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Keywords

  • InN
  • irradiation
  • positron annihilation
  • vacancy

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