Comparison of Strain Effect between Aluminum and Palladium Gated MOS Quantum Dot Systems

Brian Chi Ho Mooy, Kuan Tan, Nai-Shyan Lai

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Abstract

As nano-scale metal-oxide-semiconductor devices are cooled to temperatures below 1 K, detrimental effects due to unintentional dots become apparent. The reproducibility of the location of these unintentional dots suggests that there are other mechanisms in play, such as mechanical strains in the semiconductor introduced by metallic gates. Here, we investigate the formation of strain-induced dots on aluminum and palladium gated metal oxide semiconductor (MOS) quantum devices using COMSOL Multiphysics. Simulation results show that the strain effect on the electrochemical potential of the system can be minimized by replacing aluminum with palladium as the gate material and increasing the thickness of the gate oxide.
Original languageEnglish
Article number51
Number of pages8
JournalUniverse
Volume6
Issue number4
DOIs
Publication statusPublished - 6 Apr 2020
MoE publication typeA1 Journal article-refereed

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