Comparison of magnetocurrent and transfer ratio in magnetic tunnel transistors with spin-valve bases containing Cu and Au spacer layers

Sebastiaan van Dijken*, Xin Jiang, Stuart S P Parkin

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

31 Citations (Scopus)

Abstract

The magnetocurrent (MC) and transfer ratio in magnetic tunnel transistors (MTT) was compared with spin-valve bases containing Cu and Au spacer layers. The importance of interface scattering in MTTs and spin valves was identified. The results showed that the MC of an MTT, which originated from hot-electron transport perpendicular to spin-valve base structure, was similar for Cu and Au spacer layers.

Original languageEnglish
Pages (from-to)775-777
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number5
DOIs
Publication statusPublished - 3 Feb 2003
MoE publication typeA1 Journal article-refereed

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