Original language | English |
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Pages (from-to) | 536-539 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 298 |
DOIs | |
Publication status | Published - Jan 2007 |
MoE publication type | A1 Journal article-refereed |
Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells
Outi Reentilä, Marco Mattila, Lauri Knuuttila, Teppo Hakkarainen, Markku Sopanen, Harri Lipsanen
Research output: Contribution to journal › Article › Scientific › peer-review
6
Citations
(Scopus)