Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells

Outi Reentilä, Marco Mattila, Lauri Knuuttila, Teppo Hakkarainen, Markku Sopanen, Harri Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)536-539
    Number of pages4
    JournalJournal of Crystal Growth
    Volume298
    DOIs
    Publication statusPublished - Jan 2007
    MoE publication typeA1 Journal article-refereed

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