Comparison of Defect Images and Density Between Synchrotron Section Topography and Infrared Light Scattering Microscopy in Heat-Treated Czochralski Silicon Crystals

J. Partanen; T. Tuomi; K. Katayama

Comparison of Defect Images and Density Between Synchrotron Section Topography and Infrared Light Scattering Microscopy in Heat-Treated Czochralski Silicon Crystals

J. Partanen, T. Tuomi, K. Katayama

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	599-604
Journal	Journal of the Electrochemical Society
Volume	139
Publication status	Published - 1992
MoE publication type	A1 Journal article-refereed

Keywords

silicon
synchrotron radiation

Cite this

@article{ee7243895e82408e9d74df98f2f4d7ac,

title = "Comparison of Defect Images and Density Between Synchrotron Section Topography and Infrared Light Scattering Microscopy in Heat-Treated Czochralski Silicon Crystals",

keywords = "silicon, synchrotron radiation, silicon, synchrotron radiation, silicon, synchrotron radiation",

author = "J. Partanen and T. Tuomi and K. Katayama",

year = "1992",

language = "English",

volume = "139",

pages = "599--604",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

}

TY - JOUR

T1 - Comparison of Defect Images and Density Between Synchrotron Section Topography and Infrared Light Scattering Microscopy in Heat-Treated Czochralski Silicon Crystals

AU - Partanen, J.

AU - Tuomi, T.

AU - Katayama, K.

PY - 1992

Y1 - 1992

KW - silicon

KW - synchrotron radiation

KW - silicon

KW - synchrotron radiation

KW - silicon

KW - synchrotron radiation

M3 - Article

VL - 139

SP - 599

EP - 604

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

ER -