Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

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Surface passivation of GaAs by ammonia plasma and AlN fabricated by plasma-enhanced atomic layer deposition are compared. It is shown that the deposition temperature can be reduced to 150 °C and effective passivation is still achieved. Samples passivated by AlN fabricated at 150 °C show four times higher photoluminescence intensity and longer time-resolved photoluminescence lifetime than ammonia plasma passivated samples. The passivation effect is shown to last for months. The dependence of charge carrier lifetime and integrated photoluminescence intensity on AlN layer thickness is studied using an exponential model to describe the tunneling probability from the near-surface quantum well to the GaAs surface.


Original languageEnglish
Article number063511
Pages (from-to)1-4
Number of pages4
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

    Research areas

  • III-V semiconductors , atomic layer deposition , carrier lifetime , gallium arsenide , passivation , photoluminescence , plasma materials processing , semiconductor quantum wells , tunnelling

ID: 804598