Abstract
We have developed a time-of-flight technique for measuring the mobility of photoexcited charge carriers in certain crystals exhibiting the electro-optic effect. We used this holographic technique to find that the mobility of photoexcited electrons in a previously well-characterized sample of n-type Bi12SiO20 is 0.240.07 cm2 V-1 s-1, independent of electric field in our range of observation (2002000 V/cm). We also present results of transient photocurrent measurements. When used with our absorption measurement and previously reported values of the quantum efficiency and mobility-lifetime product, they give two independent estimates of electron mobility that are consistent with our directly measured value.
Original language | English |
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Pages (from-to) | 1487-1491 |
Number of pages | 5 |
Journal | Physical Review B |
Volume | 44 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Jan 1991 |
MoE publication type | A1 Journal article-refereed |