Comparison between holographic and transient-photocurrent measurements of electron mobility in photorefractive Bi12SiO20

J. P. Partanen, P. Nouchi, J. M C Jonathan, R. W. Hellwarth

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)

Abstract

We have developed a time-of-flight technique for measuring the mobility of photoexcited charge carriers in certain crystals exhibiting the electro-optic effect. We used this holographic technique to find that the mobility of photoexcited electrons in a previously well-characterized sample of n-type Bi12SiO20 is 0.240.07 cm2 V-1 s-1, independent of electric field in our range of observation (2002000 V/cm). We also present results of transient photocurrent measurements. When used with our absorption measurement and previously reported values of the quantum efficiency and mobility-lifetime product, they give two independent estimates of electron mobility that are consistent with our directly measured value.
Original languageEnglish
Pages (from-to)1487-1491
Number of pages5
JournalPhysical Review B
Volume44
Issue number4
DOIs
Publication statusPublished - 1 Jan 1991
MoE publication typeA1 Journal article-refereed

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