Compact Si1-x Gex/Si Heterojuction Bipolar Transistos Model for Device and Circuit Simulation

M. Andersson, Z. Xia, P. Kuivalainen, H. Pohjonen

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)1
JournalIEE Proceedings: Circuits, Devices and Systems
Issue number1
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed


  • Bipolar transistors
  • Heterostructure device physics
  • Modelling

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