Compact Si1-x Gex/Si Heterojuction Bipolar Transistos Model for Device and Circuit Simulation

M. Andersson; Z. Xia; P. Kuivalainen; H. Pohjonen

Compact Si1-x Gex/Si Heterojuction Bipolar Transistos Model for Device and Circuit Simulation

M. Andersson, Z. Xia, P. Kuivalainen, H. Pohjonen

Department of Electrical Engineering and Automation

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	1
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	142
Issue number	1
Publication status	Published - 1995
MoE publication type	A1 Journal article-refereed

Keywords

Bipolar transistors
Heterostructure device physics
Modelling

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Cite this

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title = "Compact Si1-x Gex/Si Heterojuction Bipolar Transistos Model for Device and Circuit Simulation",

keywords = "Bipolar transistors, Heterostructure device physics, Modelling, Bipolar transistors, Heterostructure device physics, Modelling, Bipolar transistors, Heterostructure device physics, Modelling",

author = "M. Andersson and Z. Xia and P. Kuivalainen and H. Pohjonen",

year = "1995",

language = "English",

volume = "142",

pages = "1",

journal = "IEE Proceedings - Circuits, Devices and Systems",

issn = "1350-2409",

publisher = "Institute of Electrical Engineers",

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TY - JOUR

T1 - Compact Si1-x Gex/Si Heterojuction Bipolar Transistos Model for Device and Circuit Simulation

AU - Andersson, M.

AU - Xia, Z.

AU - Kuivalainen, P.

AU - Pohjonen, H.

PY - 1995

Y1 - 1995

KW - Bipolar transistors

KW - Heterostructure device physics

KW - Modelling

KW - Bipolar transistors

KW - Heterostructure device physics

KW - Modelling

KW - Bipolar transistors

KW - Heterostructure device physics

KW - Modelling

M3 - Article

VL - 142

SP - 1

JO - IEE Proceedings - Circuits, Devices and Systems

JF - IEE Proceedings - Circuits, Devices and Systems

SN - 1350-2409

IS - 1

ER -