Common Mode Noise Analysis for a High Step-Up Converter with GaN Devices

Bilal Ahmad, Wilmar Martinez, Jorma Kyyrä

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)
216 Downloads (Pure)

Abstract

High Step-up converters have numerous applications in renewable energy systems and electric automotive industry. To improve the power density, an
interleaved high step-up boost converter with coupled inductor was proposed. However, for practical applications it is compulsory that this topology must comply with the CISPR standards. Therefore, to identify the noise sources in the
analyzed converter, an equivalent noise modelling is conducted. These models revealed the dependency of inductor windings on different noise sources. For experimental analysis of the conducted emissions of this topology, GaN FETs based prototype is designed. Several tests were carried out to find the effect of various factors on noise emission. As results of tests, 1) Increasing the switching frequency generates increase in the noise spikes 2) Noise emissions from the converter do depend on its mode of operation 3) High peaks of noise are generated at low frequency range by reducing the voltage transition time across
the switch.
Original languageEnglish
Title of host publicationProceedings of the IEEE Energy Conversion Congress and Exposition, ECCE 2018
PublisherIEEE
Pages1240 - 1246
ISBN (Electronic)978-1-4799-7312-5
ISBN (Print)978-1-4799-7313-2
DOIs
Publication statusPublished - 2018
MoE publication typeA4 Conference publication
Event IEEE Energy Conversion Congress and Exposition - Portland, United States
Duration: 23 Sept 201827 Sept 2018
Conference number: 10

Publication series

NameIEEE Energy Conversion Congress and Exposition
PublisherIEEE
ISSN (Print)2329-3721
ISSN (Electronic)2329-3748

Conference

Conference IEEE Energy Conversion Congress and Exposition
Abbreviated titleECCE
Country/TerritoryUnited States
CityPortland
Period23/09/201827/09/2018

Keywords

  • EMI Noise
  • High Step-up
  • DC-DC Converter
  • Coupled-Inductor
  • CM Noise
  • GaN FET's

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