Comment on "Paired Gap states in a Semiconducting Carbon Nanotube: Deep and Shallow Levels"

A. V. Krasheninnikov; A. S. Foster; R. M. Nieminen

doi:10.1103/PhysRevLett.99.179703

Comment on "Paired Gap states in a Semiconducting Carbon Nanotube: Deep and Shallow Levels"

A. V. Krasheninnikov, A. S. Foster, R. M. Nieminen

Department of Applied Physics

University of Helsinki

Research output: Contribution to journal › Editorial › Scientific

3 Citations (Scopus)

296 Downloads (Pure)

Abstract

A Comment on the Letter by Sungjun Lee et al., [Phys. Rev. Lett. 95, 166402 (2005)]. The authors of the Letter offer a Reply.

Original language	English
Article number	179703
Number of pages	1
Journal	Physical Review Letters
Volume	99
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.99.179703
Publication status	Published - 2007
MoE publication type	B1 Non-refereed journal articles

Keywords

carbon nanotubes
STM

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abstract = "A Comment on the Letter by Sungjun Lee et al., [Phys. Rev. Lett. 95, 166402 (2005)]. The authors of the Letter offer a Reply.",

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Y1 - 2007

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KW - carbon nanotubes

KW - STM

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DO - 10.1103/PhysRevLett.99.179703

M3 - Editorial

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SN - 1092-0145

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JO - Physical Review Letters

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Comment on "Paired Gap states in a Semiconducting Carbon Nanotube: Deep and Shallow Levels"

Abstract

Keywords

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