Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+

Asier Zubiaga Monsalve, F. Tuomisto, V. A. Coleman, C. Jagadish

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)


Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O+ ions to fluences from 1012 cm-2 to 1017 cm-2. At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm-1. At the highest fluences of 1016-1017 cm-2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.

Original languageEnglish
Pages (from-to)234-236
Number of pages3
JournalApplied Surface Science
Issue number1
Publication statusPublished - 31 Oct 2008
MoE publication typeA1 Journal article-refereed


  • Irradiation
  • Point-Defects
  • Positron Spectroscopy
  • Thin-Films
  • ZnO


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