Clustering of vacancy defects in high-purity semi-insulating SiC

R. Aavikko, K. Saarinen, F. Tuomisto, B. Magnusson, N.T. Son, E. Janzen

Research output: Contribution to journalArticleScientificpeer-review

30 Citations (Scopus)
124 Downloads (Pure)


Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.
Original languageEnglish
Article number085208
Pages (from-to)1-8
Number of pages8
JournalPhysical Review B
Issue number8
Publication statusPublished - Feb 2007
MoE publication typeA1 Journal article-refereed

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