Chemical stability of Ta diffusion barrier between Cu and Si

T. Laurila*, K. Zeng, J. K. Kivilahti, J. Molarius, I. Suni

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    44 Citations (Scopus)

    Abstract

    The reactions in the Si/Ta/Cu metallization system produced by the sputtering process were investigated by means of sheet resistance measurements, X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM) and optical microscopy. In particular, the reaction sequence was emphasized. The reaction mechanisms and their relation to the microstructure and defect density of the thin films are discussed on the basis of the experimental results and the assessed ternary Si-Ta-Cu phase diagram at 700 °C. It was found out that the effectiveness of the Ta barrier is mainly governed by the defect density and their distribution in the Ta film. The failure was induced by the Cu diffusion through the Ta film and almost simultaneous formation of Cu3Si and TaSi2.

    Original languageEnglish
    Pages (from-to)64-67
    Number of pages4
    JournalThin Solid Films
    Volume373
    Issue number1-2
    DOIs
    Publication statusPublished - 3 Sep 2000
    MoE publication typeA1 Journal article-refereed

    Keywords

    • copper metallization
    • diffusion barrier
    • phase diagrams
    • tantalum

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