Charging in solitary, voltage biased tunnel junctions

J. P. Kauppinen*, J. P. Pekola

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

38 Citations (Scopus)


We present experiments together with a phenomenological model on the zero bias anomaly of a single, voltage biased normal metal (A1/AlOx/Al) tunnel junction, and conclude, based on clearcut results in the high temperature regime, that this resistance peak is determined purely by the charging effect. The capacitance to be charged is, however, increased over the junction capacitance by the connecting leads within the "horizon" of the tunnel junction.

Original languageEnglish
Pages (from-to)3889-3892
Number of pages4
JournalPhysical Review Letters
Issue number18
Publication statusPublished - 28 Oct 1996
MoE publication typeA1 Journal article-refereed


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