Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy

O. Madia, N. Segercrantz, V. Afanasjev, A. Stesmans, L. Souriau, J. Slotte, F. Tuomisto

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)2211-2215
Number of pages5
JournalPHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS
Volume251
Issue number11
DOIs
Publication statusPublished - Nov 2014
MoE publication typeA1 Journal article-refereed

Keywords

  • dangling bond
  • Ge
  • positron
  • SiO2

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