Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of Leuven
  • Interuniversitair Micro-Elektronica Centrum

Details

Original languageEnglish
Pages (from-to)2211-2215
Number of pages5
JournalPHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS
Volume251
Issue number11
Publication statusPublished - Nov 2014
MoE publication typeA1 Journal article-refereed

    Research areas

  • dangling bond, Ge, positron, SiO2

ID: 728283