Charge sensitivity of the inductive single-electron transistor

Mika A. Sillanpää; Leif Roschier; Pertti J. Hakonen

doi:10.1063/1.2034096

Charge sensitivity of the inductive single-electron transistor

Mika A. Sillanpää, Leif Roschier, Pertti J. Hakonen

Department of Applied Physics

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Abstract

We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10−6e/Hz⎯⎯⎯⎯⎯√ is possible with a high Q value ∼103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/Hz⎯⎯⎯⎯⎯√ and bandwidth 100 MHz are achieved.

Original language	English
Article number	092502
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	9
DOIs	https://doi.org/10.1063/1.2034096
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

charge sensitivity
single-electron tansistors
Josephson inductance
Cooper-pair transistors

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10.1063/1.2034096

1.2034096Final published version, 451 KB

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@article{3b74afa9f65b47c5ad8715eefc0453a4,

title = "Charge sensitivity of the inductive single-electron transistor",

abstract = "We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10−6e/Hz⎯⎯⎯⎯⎯√ is possible with a high Q value ∼103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/Hz⎯⎯⎯⎯⎯√ and bandwidth 100 MHz are achieved.",

keywords = "charge sensitivity, single-electron tansistor, Josephson inductance, Cooper-pair transistor, charge sensitivity, single-electron tansistor, Josephson inductance, Cooper-pair transistor, charge sensitivity, single-electron tansistors, Josephson inductance, Cooper-pair transistors",

author = "Sillanp{\"a}{\"a}, {Mika A.} and Leif Roschier and Hakonen, {Pertti J.}",

year = "2005",

doi = "10.1063/1.2034096",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Charge sensitivity of the inductive single-electron transistor

AU - Sillanpää, Mika A.

AU - Roschier, Leif

AU - Hakonen, Pertti J.

PY - 2005

Y1 - 2005

N2 - We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10−6e/Hz⎯⎯⎯⎯⎯√ is possible with a high Q value ∼103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/Hz⎯⎯⎯⎯⎯√ and bandwidth 100 MHz are achieved.

AB - We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10−6e/Hz⎯⎯⎯⎯⎯√ is possible with a high Q value ∼103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/Hz⎯⎯⎯⎯⎯√ and bandwidth 100 MHz are achieved.

KW - charge sensitivity, single-electron tansistor, Josephson inductance, Cooper-pair transistor

KW - charge sensitivity

KW - single-electron tansistors

KW - Josephson inductance

KW - Cooper-pair transistors

U2 - 10.1063/1.2034096

DO - 10.1063/1.2034096

M3 - Article

SN - 1077-3118

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092502

ER -

Charge sensitivity of the inductive single-electron transistor

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Keywords

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