Characterization of mass-transport grown GaN by hydride vapour phase epitaxy

T. Paskova, P.P. Paskov, S. Goldgas, K. Saarinen, C.F. Carlström, Q. Wahab, B. Monemar

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)118-128
JournalJournal of Crystal Growth
Volume273
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Keywords

  • positron

Cite this

Paskova, T., Paskov, P. P., Goldgas, S., Saarinen, K., Carlström, C. F., Wahab, Q., & Monemar, B. (2004). Characterization of mass-transport grown GaN by hydride vapour phase epitaxy. Journal of Crystal Growth, 273, 118-128.