Characterization of light-activated Cu defects in silicon: Comparison with the recombination activity of metallic precipitates

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Fraunhofer Institute for Solar Energy Systems

Abstract

The presence of copper contamination is known to severely degrade the minority carrier lifetime of p-type silicon upon exposure to illumination. In this contribution, we have analyzed the recombination activity of light-activated copper defects in deliberately Cu-contaminated p-type silicon by means of a recombination model that quantitatively defines the effect of metallic precipitates on minority carrier lifetime. The excellent agreement between the model and the experimental data indicates that (i) the formation of Cu precipitates is the probable root-cause behind Cu-LID and (ii) in the samples examined in this work, the precipitate radius varies between few to several tens of nm with corresponding densities estimated to be in the range of 108–1010 cm3. Further evidence of these results was obtained from the analysis of temperature-dependent lifetime data. While applied here to light-activated copper defects, the procedure described in this article can be applied for
characterizing lifetime-limiting precipitates originated by other transition metals (e.g., Fe or Ni).

Details

Original languageEnglish
Article number1700103
Number of pages5
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Volume14
Issue number7
Early online date2017
Publication statusPublished - Jul 2017
MoE publication typeA1 Journal article-refereed

    Research areas

  • copper impurities, Cu-LID, defect characterization, metal precipitates, silicon

ID: 12776528