Characterization of epiready n+-GaAs surfaces by SPV-transient

Juha Sinkkonen; Sergey Novikov; Aapo Varpula; Jouko Haapamaa

Characterization of epiready n+-GaAs surfaces by SPV-transient

Juha Sinkkonen, Sergey Novikov, Aapo Varpula, Jouko Haapamaa

Research output: Working paper › Professional

5 Citations (Scopus)

Original language	English
Publication status	Published - 2007
MoE publication type	D4 Published development or research report or study

Publication series

Name	SPIE Microelectronics, MEMs and Nanotechnology, Canberra, Australia, 4-7.12.2007

Keywords

Kelivin probe
slow traps
surface photovoltage transient
tunneling assisted trapping

Cite this

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title = "Characterization of epiready n+-GaAs surfaces by SPV-transient",

keywords = "Kelivin probe, slow traps, surface photovoltage transient, tunneling assisted trapping, Kelivin probe, slow traps, surface photovoltage transient, tunneling assisted trapping, Kelivin probe, slow traps, surface photovoltage transient, tunneling assisted trapping",

author = "Juha Sinkkonen and Sergey Novikov and Aapo Varpula and Jouko Haapamaa",

year = "2007",

language = "English",

series = "SPIE Microelectronics, MEMs and Nanotechnology, Canberra, Australia, 4-7.12.2007",

type = "WorkingPaper",

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TY - UNPB

T1 - Characterization of epiready n+-GaAs surfaces by SPV-transient

AU - Sinkkonen, Juha

AU - Novikov, Sergey

AU - Varpula, Aapo

AU - Haapamaa, Jouko

PY - 2007

Y1 - 2007

KW - Kelivin probe

KW - slow traps

KW - surface photovoltage transient

KW - tunneling assisted trapping

KW - Kelivin probe

KW - slow traps

KW - surface photovoltage transient

KW - tunneling assisted trapping

KW - Kelivin probe

KW - slow traps

KW - surface photovoltage transient

KW - tunneling assisted trapping

M3 - Working paper

T3 - SPIE Microelectronics, MEMs and Nanotechnology, Canberra, Australia, 4-7.12.2007

BT - Characterization of epiready n+-GaAs surfaces by SPV-transient

ER -