Characterization of epiready n+-GaAs (100) surfaces by SPV-transient

Juha Sinkkonen; Sergey Novikov; Aapo Varpula; Jouko Haapamaa

Characterization of epiready n+-GaAs (100) surfaces by SPV-transient

Juha Sinkkonen, Sergey Novikov, Aapo Varpula, Jouko Haapamaa

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Original language	English
Pages (from-to)	68001
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6800
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

Keywords

Kelvin probe
slow traps
surface photovoltage transient
tunneling assisted trapping

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Cite this

@article{b8c3f1f2334b419c950836c1c417d0df,

title = "Characterization of epiready n+-GaAs (100) surfaces by SPV-transient",

keywords = "Kelvin probe, slow traps, surface photovoltage transient, tunneling assisted trapping, Kelvin probe, slow traps, surface photovoltage transient, tunneling assisted trapping, Kelvin probe, slow traps, surface photovoltage transient, tunneling assisted trapping",

author = "Juha Sinkkonen and Sergey Novikov and Aapo Varpula and Jouko Haapamaa",

year = "2008",

language = "English",

volume = "6800",

pages = "68001",

journal = "SPIE Conference Proceedings",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Characterization of epiready n+-GaAs (100) surfaces by SPV-transient

AU - Sinkkonen, Juha

AU - Novikov, Sergey

AU - Varpula, Aapo

AU - Haapamaa, Jouko

PY - 2008

Y1 - 2008

KW - Kelvin probe

KW - slow traps

KW - surface photovoltage transient

KW - tunneling assisted trapping

KW - Kelvin probe

KW - slow traps

KW - surface photovoltage transient

KW - tunneling assisted trapping

KW - Kelvin probe

KW - slow traps

KW - surface photovoltage transient

KW - tunneling assisted trapping

M3 - Article

VL - 6800

SP - 68001

JO - SPIE Conference Proceedings

JF - SPIE Conference Proceedings

SN - 0277-786X

ER -