Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

Antti Haarahiltunen; Hele Väinölä; M Yli-Koski; Risto Ruotsalainen; E Saarnilehto; S Kaarlela; E Haimi; J. Sinkkonen

doi:10.1201/9781351074636

Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

Antti Haarahiltunen, Hele Väinölä, M Yli-Koski, Risto Ruotsalainen, E Saarnilehto, S Kaarlela, E Haimi, J. Sinkkonen

Department of Electronics and Nanoengineering

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Editors	A.G. Cullis, P.A. Midgley
Publisher	Taylor & Francis
Pages	417-420
Volume	180
ISBN (Electronic)	9781351074636
ISBN (Print)	0-7503-0979-2
DOIs	https://doi.org/10.1201/9781351074636
Publication status	Published - 2003
MoE publication type	A4 Conference publication
Event	International Conference on Microscopy of Semiconducting Materials - Cambridge, United Kingdom Duration: 31 Mar 2003 → 4 Apr 2003 Conference number: 13

Conference

Conference	International Conference on Microscopy of Semiconducting Materials
Abbreviated title	MSM
Country/Territory	United Kingdom
City	Cambridge
Period	31/03/2003 → 04/04/2003

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10.1201/9781351074636

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Haarahiltunen, A., Väinölä, H., Yli-Koski, M., Ruotsalainen, R., Saarnilehto, E., Kaarlela, S., Haimi, E., & Sinkkonen, J. (2003). Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements. In A. G. Cullis, & P. A. Midgley (Eds.), Microscopy of Semiconducting Materials 2003 (Vol. 180, pp. 417-420). Taylor & Francis. https://doi.org/10.1201/9781351074636

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title = "Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements",

abstract = "In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.",

author = "Antti Haarahiltunen and Hele V{\"a}in{\"o}l{\"a} and M Yli-Koski and Risto Ruotsalainen and E Saarnilehto and S Kaarlela and E Haimi and J. Sinkkonen",

year = "2003",

doi = "10.1201/9781351074636",

language = "English",

isbn = "0-7503-0979-2",

volume = "180",

pages = "417--420",

editor = "A.G. Cullis and P.A. Midgley",

booktitle = "Microscopy of Semiconducting Materials 2003",

publisher = "Taylor & Francis",

address = "United States",

note = "International Conference on Microscopy of Semiconducting Materials, MSM ; Conference date: 31-03-2003 Through 04-04-2003",

}

Haarahiltunen, A, Väinölä, H , Yli-Koski, M, Ruotsalainen, R, Saarnilehto, E, Kaarlela, S, Haimi, E & Sinkkonen, J 2003, Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements. in AG Cullis & PA Midgley (eds), Microscopy of Semiconducting Materials 2003. vol. 180, Taylor & Francis, pp. 417-420, International Conference on Microscopy of Semiconducting Materials, Cambridge, United Kingdom, 31/03/2003. https://doi.org/10.1201/9781351074636

Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements. / Haarahiltunen, Antti; Väinölä, Hele ; Yli-Koski, M et al.
Microscopy of Semiconducting Materials 2003. ed. / A.G. Cullis; P.A. Midgley. Vol. 180 Taylor & Francis, 2003. p. 417-420.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

AU - Haarahiltunen, Antti

AU - Väinölä, Hele

AU - Yli-Koski, M

AU - Ruotsalainen, Risto

AU - Saarnilehto, E

AU - Kaarlela, S

AU - Haimi, E

AU - Sinkkonen, J.

N1 - Conference code: 13

PY - 2003

Y1 - 2003

N2 - In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.

AB - In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.

U2 - 10.1201/9781351074636

DO - 10.1201/9781351074636

M3 - Conference article in proceedings

SN - 0-7503-0979-2

VL - 180

SP - 417

EP - 420

BT - Microscopy of Semiconducting Materials 2003

A2 - Cullis, A.G.

A2 - Midgley, P.A.

PB - Taylor & Francis

T2 - International Conference on Microscopy of Semiconducting Materials

Y2 - 31 March 2003 through 4 April 2003

ER -

Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

Abstract

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