Abstract
The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.
| Original language | English |
|---|---|
| Article number | 046101 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 108 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2010 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- positron
- vacancy
- ZnO
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