Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

Vishnukanthan Venkatachalapathy, Augustinas Galeckas, Asier Zubiaga, Filip Tuomisto, Andrej Yu Kuznetsov

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)
311 Downloads (Pure)

Abstract

The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.
Original languageEnglish
Article number046101
Pages (from-to)1-3
Number of pages3
JournalJournal of Applied Physics
Volume108
Issue number4
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Keywords

  • positron
  • vacancy
  • ZnO

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