Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

Vishnukanthan Venkatachalapathy; Augustinas Galeckas; Asier Zubiaga; Filip Tuomisto; Andrej Yu Kuznetsov

doi:10.1063/1.3462394

Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

Vishnukanthan Venkatachalapathy, Augustinas Galeckas, Asier Zubiaga, Filip Tuomisto, Andrej Yu Kuznetsov

Department of Applied Physics

University of Oslo

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.

Original language	English
Article number	046101
Pages (from-to)	1-3
Number of pages	3
Journal	Journal of Applied Physics
Volume	108
Issue number	4
DOIs	https://doi.org/10.1063/1.3462394
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

Keywords

positron
vacancy
ZnO

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Cite this

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abstract = "The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.",

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AU - Kuznetsov, Andrej Yu

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Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

Abstract

Keywords

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