Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy

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Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy. / Molina-Mendoza, Aday J.; Lado, José L.; Island, Joshua O.; Niño, Miguel Angel; Aballe, Lucía; Foerster, Michael; Bruno, Flavio Y.; López-Moreno, Alejandro; Vaquero-Garzon, Luis; Van Der Zant, Herre S.J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Pérez, Emilio M.; Fernández-Rossier, Joaquín; Castellanos-Gomez, Andres.

In: Chemistry of Materials, Vol. 28, No. 11, 14.06.2016, p. 4042-4051.

Research output: Contribution to journalArticle

Harvard

Molina-Mendoza, AJ, Lado, JL, Island, JO, Niño, MA, Aballe, L, Foerster, M, Bruno, FY, López-Moreno, A, Vaquero-Garzon, L, Van Der Zant, HSJ, Rubio-Bollinger, G, Agraït, N, Pérez, EM, Fernández-Rossier, J & Castellanos-Gomez, A 2016, 'Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy', Chemistry of Materials, vol. 28, no. 11, pp. 4042-4051. https://doi.org/10.1021/acs.chemmater.6b01505

APA

Molina-Mendoza, A. J., Lado, J. L., Island, J. O., Niño, M. A., Aballe, L., Foerster, M., ... Castellanos-Gomez, A. (2016). Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy. Chemistry of Materials, 28(11), 4042-4051. https://doi.org/10.1021/acs.chemmater.6b01505

Vancouver

Molina-Mendoza AJ, Lado JL, Island JO, Niño MA, Aballe L, Foerster M et al. Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy. Chemistry of Materials. 2016 Jun 14;28(11):4042-4051. https://doi.org/10.1021/acs.chemmater.6b01505

Author

Molina-Mendoza, Aday J. ; Lado, José L. ; Island, Joshua O. ; Niño, Miguel Angel ; Aballe, Lucía ; Foerster, Michael ; Bruno, Flavio Y. ; López-Moreno, Alejandro ; Vaquero-Garzon, Luis ; Van Der Zant, Herre S.J. ; Rubio-Bollinger, Gabino ; Agraït, Nicolás ; Pérez, Emilio M. ; Fernández-Rossier, Joaquín ; Castellanos-Gomez, Andres. / Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy. In: Chemistry of Materials. 2016 ; Vol. 28, No. 11. pp. 4042-4051.

Bibtex - Download

@article{e3f8b5635ad54d489a2023287b46d627,
title = "Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy",
abstract = "We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure, van der Waals epitaxy growth on muscovite mica substrates. By this method, we are able to synthesize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and be extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction, and thus, it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 μm × 110 μm in lateral dimensions) and find responsivities of 30 mA W-1 for a laser power density of 13 mW cm-2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor.",
author = "Molina-Mendoza, {Aday J.} and Lado, {Jos{\'e} L.} and Island, {Joshua O.} and Ni{\~n}o, {Miguel Angel} and Luc{\'i}a Aballe and Michael Foerster and Bruno, {Flavio Y.} and Alejandro L{\'o}pez-Moreno and Luis Vaquero-Garzon and {Van Der Zant}, {Herre S.J.} and Gabino Rubio-Bollinger and Nicol{\'a}s Agra{\"i}t and P{\'e}rez, {Emilio M.} and Joaqu{\'i}n Fern{\'a}ndez-Rossier and Andres Castellanos-Gomez",
year = "2016",
month = "6",
day = "14",
doi = "10.1021/acs.chemmater.6b01505",
language = "English",
volume = "28",
pages = "4042--4051",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "AMERICAN CHEMICAL SOCIETY",
number = "11",

}

RIS - Download

TY - JOUR

T1 - Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy

AU - Molina-Mendoza, Aday J.

AU - Lado, José L.

AU - Island, Joshua O.

AU - Niño, Miguel Angel

AU - Aballe, Lucía

AU - Foerster, Michael

AU - Bruno, Flavio Y.

AU - López-Moreno, Alejandro

AU - Vaquero-Garzon, Luis

AU - Van Der Zant, Herre S.J.

AU - Rubio-Bollinger, Gabino

AU - Agraït, Nicolás

AU - Pérez, Emilio M.

AU - Fernández-Rossier, Joaquín

AU - Castellanos-Gomez, Andres

PY - 2016/6/14

Y1 - 2016/6/14

N2 - We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure, van der Waals epitaxy growth on muscovite mica substrates. By this method, we are able to synthesize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and be extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction, and thus, it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 μm × 110 μm in lateral dimensions) and find responsivities of 30 mA W-1 for a laser power density of 13 mW cm-2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor.

AB - We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure, van der Waals epitaxy growth on muscovite mica substrates. By this method, we are able to synthesize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and be extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction, and thus, it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 μm × 110 μm in lateral dimensions) and find responsivities of 30 mA W-1 for a laser power density of 13 mW cm-2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor.

UR - http://www.scopus.com/inward/record.url?scp=84975038958&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.6b01505

DO - 10.1021/acs.chemmater.6b01505

M3 - Article

VL - 28

SP - 4042

EP - 4051

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 11

ER -

ID: 36719923