Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Research output: Contribution to journalArticleScientificpeer-review


  • Esa Korhonen
  • V. Prozheeva
  • F. Tuomisto
  • O. Bierwagen
  • J.S. Speck
  • M.E. White
  • Z. Galazka
  • H. Liu
  • N. Izyumskaya
  • U. Özgür
  • H. Morkoç

Research units

  • University of California at Santa Barbara
  • Leibniz Institute for Crystal Growth
  • Virginia Commonwealth University
  • Paul Drude Institute for Solid State Electronics


Original languageEnglish
Article number024011
Pages (from-to)1-7
Number of pages7
JournalSemiconductor Science and Technology
Issue number2
Publication statusPublished - 19 Jan 2015
MoE publication typeA1 Journal article-refereed

    Research areas

  • positron, SnO2, vacancy, ZnO

ID: 2007474