Catalyst-free growth of In(As)P nanowires on silicon

Research output: Contribution to journalArticle


Research units

  • VTT Technical Research Centre of Finland


The catalyst-free metal organic vapor phase epitaxial growth of In(As)P nanowires on silicon substrates is investigated using in situ deposited In droplets as seeds for nanowire growth. The thin substrate native oxide is found to play a crucial role in the nanowire formation. The structure of the nanowires is characterized by photoluminescence and electron microscopy measurements. The crystal structure of the InP nanowires is wurtzite with its c axis perpendicular to the nanowire axis. Adding arsenic precursor to the gas phase during growth results in a bimodal photoluminescence spectrum exhibiting peak at the InAsP and InP band gap energies.


Original languageEnglish
Article number063119
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

    Research areas

  • nanowire, InP, silicon, photoluminescence, wurtzite

Download statistics

No data available

ID: 3520112