Carrier relaxation in strain-induced (GaIn)As quantum dots

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Ludwig-Maximilians-University
  • University of Cambridge
  • VTT Technical Research Centre of Finland

Details

Original languageEnglish
Pages (from-to)421-425
Number of pages5
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume164
Issue number1
Publication statusPublished - Nov 1997
MoE publication typeA1 Journal article-refereed

    Research areas

  • carrier relaxation, quantum dots

ID: 4982925