Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects

Research output: Contribution to journalArticle


Research units

  • Ludwig-Maximilians-University
  • VTT Technical Research Centre of Finland


Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.


Original languageEnglish
Pages (from-to)4473-4476
Number of pages4
JournalPhysical Review B
Issue number7
Publication statusPublished - 15 Feb 1997
MoE publication typeA1 Journal article-refereed

    Research areas

  • carrier relaxation dynamics, quantum dots

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