Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures

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Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures. / Lingk, C.; Helfer, W.; von Plessen, G.; Feldmann, J.; Stock, K.; Feise, W.M.; Citrin, D.S.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Tulkki, J.; Ahopelto, J.

In: Physical Review B, Vol. 62, No. 20, 15.11.2000, p. 13588-13594.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Lingk, C, Helfer, W, von Plessen, G, Feldmann, J, Stock, K, Feise, WM, Citrin, DS, Lipsanen, H, Sopanen, M, Virkkala, R, Tulkki, J & Ahopelto, J 2000, 'Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures' Physical Review B, vol. 62, no. 20, pp. 13588-13594. https://doi.org/10.1103/PhysRevB.62.13588

APA

Lingk, C., Helfer, W., von Plessen, G., Feldmann, J., Stock, K., Feise, W. M., ... Ahopelto, J. (2000). Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures. Physical Review B, 62(20), 13588-13594. https://doi.org/10.1103/PhysRevB.62.13588

Vancouver

Lingk C, Helfer W, von Plessen G, Feldmann J, Stock K, Feise WM et al. Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures. Physical Review B. 2000 Nov 15;62(20):13588-13594. https://doi.org/10.1103/PhysRevB.62.13588

Author

Lingk, C. ; Helfer, W. ; von Plessen, G. ; Feldmann, J. ; Stock, K. ; Feise, W.M. ; Citrin, D.S. ; Lipsanen, H. ; Sopanen, M. ; Virkkala, R. ; Tulkki, J. ; Ahopelto, J. / Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures. In: Physical Review B. 2000 ; Vol. 62, No. 20. pp. 13588-13594.

Bibtex - Download

@article{a5355551bd17487c80fc0a46634c52c5,
title = "Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures",
abstract = "We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.",
keywords = "photoluminescence, quantum dot, stressor, photoluminescence, quantum dot, stressor, photoluminescence, quantum dot, stressor",
author = "C. Lingk and W. Helfer and {von Plessen}, G. and J. Feldmann and K. Stock and W.M. Feise and D.S. Citrin and H. Lipsanen and M. Sopanen and R. Virkkala and J. Tulkki and J. Ahopelto",
year = "2000",
month = "11",
day = "15",
doi = "10.1103/PhysRevB.62.13588",
language = "English",
volume = "62",
pages = "13588--13594",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "2469-9950",
publisher = "American Physical Society",
number = "20",

}

RIS - Download

TY - JOUR

T1 - Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures

AU - Lingk, C.

AU - Helfer, W.

AU - von Plessen, G.

AU - Feldmann, J.

AU - Stock, K.

AU - Feise, W.M.

AU - Citrin, D.S.

AU - Lipsanen, H.

AU - Sopanen, M.

AU - Virkkala, R.

AU - Tulkki, J.

AU - Ahopelto, J.

PY - 2000/11/15

Y1 - 2000/11/15

N2 - We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.

AB - We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.

KW - photoluminescence

KW - quantum dot

KW - stressor

KW - photoluminescence

KW - quantum dot

KW - stressor

KW - photoluminescence

KW - quantum dot

KW - stressor

U2 - 10.1103/PhysRevB.62.13588

DO - 10.1103/PhysRevB.62.13588

M3 - Article

VL - 62

SP - 13588

EP - 13594

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

IS - 20

ER -

ID: 4150391