Can hydrogenation mitigate Cu-induced bulk degradation in silicon?

Ismo T.S. Heikkinen, Brendan Wright, Anastasia H. Soeriyadi, Marko Yli-Koski, Moonyong Kim, Ville Vähänissi, Brett J. Hallam, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Many defects can cause significant bulk degradation in crystalline silicon, which inherently limits solar cell efficiency. Perhaps the most well-known source of light-induced bulk degradation (LID) in Czochralski-grown silicon is the boron-oxygen defect. However, metal impurities, such as copper, can also cause severe degradation. Advanced hydrogenation processes incorporating minority carrier injection can effectively passivate boron-oxygen complexes, but their effect on copper-induced degradation has not been studied previously. Herein, we explore the effect of hydrogenation on LID in copper-contaminated silicon. Without hydrogenation the bulk lifetime decreases down to 5\ \mu\mathrm{s} while in hydrogenated samples the bulk lifetime remains above 300\ \mu\mathrm{s} during the whole degradation cycle. The results thus indicate that even in heavily copper-contaminated silicon hydrogenation can passivate Cu precipitates and mitigate Cu-LID.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Number of pages4
ISBN (Electronic)9781728161150
Publication statusPublished - 2021
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020
Conference number: 47

Publication series

NameConference record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC


  • bulk defects
  • copper contamination
  • hydrogenation
  • light-induced degradation

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