TY - JOUR
T1 - Boron Implanted Junction with In Situ Oxide Passivation and Application to p-PERT Bifacial Silicon Solar Cell
AU - Huang, Haibing
AU - Wang, Lichun
AU - Mandrell, Lisa
AU - Modanese, Chiara
AU - Sun, Shenghua
AU - Wang, Jianbo
AU - Wang, Aihua
AU - Zhao, Jianhua
AU - Adibi, Babak
AU - Savin, Hele
PY - 2019/3/20
Y1 - 2019/3/20
N2 -
Boron junction and its passivation is an active topic in photovoltaic research due to its importance to passivated emitter and rear totally-diffused (PERT) bifacial Si solar cell. In this paper, a systematic study on boron-implanted junction, its passivation and ohmic contact formation, as well as application to p-PERT bifacial cells has been presented. More specifically, the impact of junction profile and surface passivation on boron junction quality, which can be influenced by implantation and in situ oxidation anneal parameters is studied. Good-quality boron emitter and metal/p
+
-Si ohmic contact are achieved, as demonstrated by emitter saturation current of 5–30 fA cm
−2
and specific contact resistance of 3–6 mΩ cm
−1
. A roadmap for a p-PERT bifacial cell using fully ion implanted (boron and phosphorus) technology, based on which p-PERT bifacial cells demonstrats front side efficiency of 20.6% (open circuit voltage of 658 mV), rear side efficiency of ≈17% and bifaciality factor of 0.82–0.87 is also presented. Effective cell efficiency of ≈22% is achieved with a Halm IV-tester with white transporting belts that enhance reflection about 10% from the cell rear.
AB -
Boron junction and its passivation is an active topic in photovoltaic research due to its importance to passivated emitter and rear totally-diffused (PERT) bifacial Si solar cell. In this paper, a systematic study on boron-implanted junction, its passivation and ohmic contact formation, as well as application to p-PERT bifacial cells has been presented. More specifically, the impact of junction profile and surface passivation on boron junction quality, which can be influenced by implantation and in situ oxidation anneal parameters is studied. Good-quality boron emitter and metal/p
+
-Si ohmic contact are achieved, as demonstrated by emitter saturation current of 5–30 fA cm
−2
and specific contact resistance of 3–6 mΩ cm
−1
. A roadmap for a p-PERT bifacial cell using fully ion implanted (boron and phosphorus) technology, based on which p-PERT bifacial cells demonstrats front side efficiency of 20.6% (open circuit voltage of 658 mV), rear side efficiency of ≈17% and bifaciality factor of 0.82–0.87 is also presented. Effective cell efficiency of ≈22% is achieved with a Halm IV-tester with white transporting belts that enhance reflection about 10% from the cell rear.
KW - and rear totally-diffused
KW - boron emitter
KW - in situ oxidation anneal
KW - ion implantation
KW - passivated emitter
KW - surface passivation
UR - http://www.scopus.com/inward/record.url?scp=85061804353&partnerID=8YFLogxK
U2 - 10.1002/pssa.201800414
DO - 10.1002/pssa.201800414
M3 - Article
AN - SCOPUS:85061804353
SN - 1862-6300
VL - 216
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 6
M1 - 1800414
ER -