Bonding of ALD alumina for advanced SOI substrates

Tommi Suni*, Riikka L. Puurunen, Oili Ylivaara, Hannu Kattelus, Kimmo Henttinen, Tadashi Ishida, Hiroyuki Fujita

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

7 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele
Pages137-144
Number of pages8
Volume33
Edition4
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
EventElectrochemical Society Meeting - Las Vegas , United States
Duration: 10 Oct 201015 Oct 2010
Conference number: 218

Conference

ConferenceElectrochemical Society Meeting
Abbreviated titleECS
Country/TerritoryUnited States
CityLas Vegas
Period10/10/201015/10/2010

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