Abstract
Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stress-driven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress-and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at least two distinct mechanisms can cause blistering in ALD films. Published by AIP Publishing.
Original language | English |
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Article number | 141606 |
Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 111 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2 Oct 2017 |
MoE publication type | A1 Journal article-refereed |
Keywords
- THIN-FILMS
- CRYSTAL-STRUCTURE
- ALUMINUM-OXIDE
- HYDROGEN
- SILICON
- DIFFUSION
- GROWTH
- WATER
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OtaNano - Nanomicroscopy Center
Seitsonen, J. (Manager) & Rissanen, A. (Other)
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