Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films

Mikael Broas*, Hua Jiang, Andreas Graff, Timo Sajavaara, Vesa Vuorinen, Mervi Paulasto-Kröckel

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)
98 Downloads (Pure)

Abstract

Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stress-driven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress-and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at least two distinct mechanisms can cause blistering in ALD films. Published by AIP Publishing.

Original languageEnglish
Article number141606
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume111
Issue number14
DOIs
Publication statusPublished - 2 Oct 2017
MoE publication typeA1 Journal article-refereed

Keywords

  • THIN-FILMS
  • CRYSTAL-STRUCTURE
  • ALUMINUM-OXIDE
  • HYDROGEN
  • SILICON
  • DIFFUSION
  • GROWTH
  • WATER

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