Black silicon boron emitter solar cells with EQE above 95% in UV

Kexun Chen; Ville Vähänissi; Zahra Jahanshah Rad; Juha Pekka Lehtio; Pekka Laukkanen; Marko Yli-Koski; Hele Savin

doi:10.1109/PVSC45281.2020.9300686

Black silicon boron emitter solar cells with EQE above 95% in UV

Kexun Chen
, Ville Vähänissi
, Zahra Jahanshah Rad
, Juha Pekka Lehtio
, Pekka Laukkanen
, Marko Yli-Koski
, Hele Savin

University of Turku

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.

Original language	English
Title of host publication	Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Publisher	IEEE
Pages	2586-2589
Number of pages	4
ISBN (Electronic)	9781728161150
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300686
Publication status	Published - 2020
MoE publication type	A4 Conference publication
Event	IEEE Photovoltaic Specialists Conference - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020 Conference number: 47

Publication series

Name	Conference record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	IEEE Photovoltaic Specialists Conference
Abbreviated title	PVSC
Country/Territory	Canada
City	Calgary
Period	15/06/2020 → 21/08/2020

Funding

ACKNOWLEDGMENT The work was funded through the Business Finland TUTLI project (SISUPROCO, 1671/31/2018). The work is also included in the Flagship on Photonics Research and Innovation PREIN funded by Academy of Finland. The authors acknowledge also the provision of facilities and technical support by Micronova Nanofabrication Centre and Nanomicroscopy Centre in Espoo, Finland within the OtaNano research infrastructure at Aalto University.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

black silicon
emitter passivation
metallization patterning
quantum efficiency

Access to Document

10.1109/PVSC45281.2020.9300686

Cite this

Chen, K., Vähänissi, V., Rad, Z. J., Lehtio, J. P., Laukkanen, P., Yli-Koski, M., & Savin, H. (2020). Black silicon boron emitter solar cells with EQE above 95% in UV. In Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 (pp. 2586-2589). Article 9300686 (Conference record of the IEEE Photovoltaic Specialists Conference). IEEE. https://doi.org/10.1109/PVSC45281.2020.9300686

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title = "Black silicon boron emitter solar cells with EQE above 95\% in UV",

abstract = "Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100\% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.",

keywords = "black silicon, emitter passivation, metallization patterning, quantum efficiency",

author = "Kexun Chen and Ville V{\"a}h{\"a}nissi and Rad, \{Zahra Jahanshah\} and Lehtio, \{Juha Pekka\} and Pekka Laukkanen and Marko Yli-Koski and Hele Savin",

year = "2020",

doi = "10.1109/PVSC45281.2020.9300686",

language = "English",

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publisher = "IEEE",

pages = "2586--2589",

booktitle = "Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",

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note = "IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 15-06-2020 Through 21-08-2020",

}

Chen, K , Vähänissi, V, Rad, ZJ, Lehtio, JP, Laukkanen, P, Yli-Koski, M & Savin, H 2020, Black silicon boron emitter solar cells with EQE above 95% in UV. in Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020., 9300686, Conference record of the IEEE Photovoltaic Specialists Conference, IEEE, pp. 2586-2589, IEEE Photovoltaic Specialists Conference, Calgary, Canada, 15/06/2020. https://doi.org/10.1109/PVSC45281.2020.9300686

Black silicon boron emitter solar cells with EQE above 95% in UV. / Chen, Kexun ; Vähänissi, Ville; Rad, Zahra Jahanshah et al.
Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. IEEE, 2020. p. 2586-2589 9300686 (Conference record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - Black silicon boron emitter solar cells with EQE above 95% in UV

AU - Chen, Kexun

AU - Vähänissi, Ville

AU - Rad, Zahra Jahanshah

AU - Lehtio, Juha Pekka

AU - Laukkanen, Pekka

AU - Yli-Koski, Marko

AU - Savin, Hele

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AB - Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.

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ER -

Black silicon boron emitter solar cells with EQE above 95% in UV

Abstract

Publication series

Conference

Funding

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

-: Photonics Research and Innovation

SISUPROCO: Silicon Surface Processing Commercialization

OtaNano

OtaNano - Nanofab

Cite this

Black silicon boron emitter solar cells with EQE above 95% in UV

Abstract

Publication series

Conference

Funding

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

Projects

-: Photonics Research and Innovation

SISUPROCO: Silicon Surface Processing Commercialization

Equipment

OtaNano

OtaNano - Nanofab

Cite this