Projects per year
Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.
|Title of host publication||Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020|
|Number of pages||4|
|Publication status||Published - 2020|
|MoE publication type||A4 Article in a conference publication|
|Event||IEEE Photovoltaic Specialists Conference - Calgary, Canada|
Duration: 15 Jun 2020 → 21 Aug 2020
Conference number: 47
|Name||Conference record of the IEEE Photovoltaic Specialists Conference|
|Conference||IEEE Photovoltaic Specialists Conference|
|Period||15/06/2020 → 21/08/2020|
- black silicon
- emitter passivation
- metallization patterning
- quantum efficiency
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- 2 Finished
Savin, H., Ayedh, H., Mulbagal Rajanna, P., Rauha, I., Liu, H. & Vähänissi, V.
01/01/2019 → 31/12/2022
Project: Academy of Finland: Other research funding
Savin, H., Rosta, K., Vähänissi, V. & Mack, I.
01/06/2018 → 31/12/2019
Project: Business Finland: Other research funding
Anna Rissanen (Manager)Aalto University
OtaNano - Nanofab
Päivikki Repo (Manager)OtaNano