Black silicon boron emitter solar cells with EQE above 95% in UV

Kexun Chen, Ville Vähänissi, Zahra Jahanshah Rad, Juha Pekka Lehtio, Pekka Laukkanen, Marko Yli-Koski, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherIEEE
Pages2586-2589
Number of pages4
ISBN (Electronic)9781728161150
DOIs
Publication statusPublished - 2021
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020
Conference number: 47

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
CountryCanada
CityCalgary
Period15/06/202021/08/2020

Keywords

  • black silicon
  • emitter passivation
  • metallization patterning
  • quantum efficiency

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