Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari; Toufik Sadi; Jingrui Li; Vihar Georgiev; Jani Oksanen; Patrick Rinke; Jukka Tulkki

doi:10.1109/NUSOD.2015.7292797

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari, Toufik Sadi, Jingrui Li, Vihar Georgiev, Jani Oksanen, Patrick Rinke, Jukka Tulkki

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.

Original language	English
Title of host publication	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Publisher	IEEE
Pages	11-12
Number of pages	2
Volume	2015-May
ISBN (Print)	978-1-4799-8379-7
DOIs	https://doi.org/10.1109/NUSOD.2015.7292797
Publication status	Published - 10 May 2015
MoE publication type	A4 Conference publication
Event	International Conference on Numerical Simulation of Optoelectronic Devices - Taipei, Taiwan, Republic of China Duration: 7 Sept 2015 → 11 Sept 2015 Conference number: 15

Conference

Conference	International Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD
Country/Territory	Taiwan, Republic of China
City	Taipei
Period	07/09/2015 → 11/09/2015

Keywords

Charge carrier processes
Gallium nitride
Hot carrier effects
Light emitting diodes
Monte Carlo methods
Scattering

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10.1109/NUSOD.2015.7292797

Cite this

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title = "Bipolar Monte Carlo simulation of hot carriers in III-N LEDs",

abstract = "We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.",

keywords = "Charge carrier processes, Gallium nitride, Hot carrier effects, Light emitting diodes, Monte Carlo methods, Scattering",

author = "Pyry Kivisaari and Toufik Sadi and Jingrui Li and Vihar Georgiev and Jani Oksanen and Patrick Rinke and Jukka Tulkki",

year = "2015",

month = may,

day = "10",

doi = "10.1109/NUSOD.2015.7292797",

language = "English",

isbn = "978-1-4799-8379-7",

volume = "2015-May",

pages = "11--12",

booktitle = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

publisher = "IEEE",

address = "United States",

note = "International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 07-09-2015 Through 11-09-2015",

}

Kivisaari, P, Sadi, T, Li, J, Georgiev, V, Oksanen, J , Rinke, P & Tulkki, J 2015, Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. in Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD. vol. 2015-May, 7292797, IEEE, pp. 11-12, International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Republic of China, 07/09/2015. https://doi.org/10.1109/NUSOD.2015.7292797

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. / Kivisaari, Pyry; Sadi, Toufik; Li, Jingrui et al.
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD. Vol. 2015-May IEEE, 2015. p. 11-12 7292797.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

AU - Kivisaari, Pyry

AU - Sadi, Toufik

AU - Li, Jingrui

AU - Georgiev, Vihar

AU - Oksanen, Jani

AU - Rinke, Patrick

AU - Tulkki, Jukka

N1 - Conference code: 15

PY - 2015/5/10

Y1 - 2015/5/10

N2 - We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.

AB - We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.

KW - Charge carrier processes

KW - Gallium nitride

KW - Hot carrier effects

KW - Light emitting diodes

KW - Monte Carlo methods

KW - Scattering

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U2 - 10.1109/NUSOD.2015.7292797

DO - 10.1109/NUSOD.2015.7292797

M3 - Conference article in proceedings

AN - SCOPUS:84959233297

SN - 978-1-4799-8379-7

VL - 2015-May

SP - 11

EP - 12

BT - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

PB - IEEE

T2 - International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 7 September 2015 through 11 September 2015

ER -

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

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Keywords

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