Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

Original languageEnglish
Title of host publication2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
PublisherIEEE
Pages393-396
Number of pages4
Volume2015-October
ISBN (Electronic)9781467378581
DOIs
Publication statusPublished - 5 Oct 2015
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Simulation of Semiconductor Processes and Devices - Washington, United States
Duration: 9 Sep 201511 Sep 2015
Conference number: 20

Publication series

Name International Conference on Simulation of Semiconductor Processes and Devices
ISSN (Print)1946-1569

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
Abbreviated titleSISPAD 2015
CountryUnited States
CityWashington
Period09/09/201511/09/2015

Fingerprint Dive into the research topics of 'Bipolar Monte Carlo simulation of hot carriers in III-N LEDs'. Together they form a unique fingerprint.

  • Cite this

    Kivisaari, P., Sadi, T., Li, J., Georgiev, V., Oksanen, J., Rinke, P., & Tulkki, J. (2015). Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 (Vol. 2015-October, pp. 393-396). [7292342] ( International Conference on Simulation of Semiconductor Processes and Devices). IEEE. https://doi.org/10.1109/SISPAD.2015.7292342