Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari; Toufik Sadi; Jingrui Li; Vihar Georgiev; Jani Oksanen; Patrick Rinke; Jukka Tulkki

doi:10.1109/SISPAD.2015.7292342

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari, Toufik Sadi, Jingrui Li, Vihar Georgiev, Jani Oksanen, Patrick Rinke, Jukka Tulkki

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

Original language	English
Title of host publication	2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Publisher	IEEE
Pages	393-396
Number of pages	4
Volume	2015-October
ISBN (Electronic)	9781467378581
DOIs	https://doi.org/10.1109/SISPAD.2015.7292342
Publication status	Published - 5 Oct 2015
MoE publication type	A4 Conference publication
Event	International Conference on Simulation of Semiconductor Processes and Devices - Washington, United States Duration: 9 Sept 2015 → 11 Sept 2015 Conference number: 20

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices
ISSN (Print)	1946-1569

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
Abbreviated title	SISPAD 2015
Country/Territory	United States
City	Washington
Period	09/09/2015 → 11/09/2015

Access to Document

10.1109/SISPAD.2015.7292342

Cite this

Kivisaari, P., Sadi, T., Li, J., Georgiev, V., Oksanen, J., Rinke, P., & Tulkki, J. (2015). Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 (Vol. 2015-October, pp. 393-396). Article 7292342 ( International Conference on Simulation of Semiconductor Processes and Devices). IEEE. https://doi.org/10.1109/SISPAD.2015.7292342

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title = "Bipolar Monte Carlo simulation of hot carriers in III-N LEDs",

abstract = "We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.",

author = "Pyry Kivisaari and Toufik Sadi and Jingrui Li and Vihar Georgiev and Jani Oksanen and Patrick Rinke and Jukka Tulkki",

year = "2015",

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doi = "10.1109/SISPAD.2015.7292342",

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Kivisaari, P, Sadi, T, Li, J, Georgiev, V, Oksanen, J , Rinke, P & Tulkki, J 2015, Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. in 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. vol. 2015-October, 7292342, International Conference on Simulation of Semiconductor Processes and Devices, IEEE, pp. 393-396, International Conference on Simulation of Semiconductor Processes and Devices, Washington, United States, 09/09/2015. https://doi.org/10.1109/SISPAD.2015.7292342

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. / Kivisaari, Pyry; Sadi, Toufik; Li, Jingrui et al.
2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Vol. 2015-October IEEE, 2015. p. 393-396 7292342 ( International Conference on Simulation of Semiconductor Processes and Devices).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

AU - Kivisaari, Pyry

AU - Sadi, Toufik

AU - Li, Jingrui

AU - Georgiev, Vihar

AU - Oksanen, Jani

AU - Rinke, Patrick

AU - Tulkki, Jukka

N1 - Conference code: 20

PY - 2015/10/5

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N2 - We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

AB - We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

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T3 - International Conference on Simulation of Semiconductor Processes and Devices

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BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015

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Kivisaari P, Sadi T, Li J, Georgiev V, Oksanen J , Rinke P et al. Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Vol. 2015-October. IEEE. 2015. p. 393-396. 7292342. ( International Conference on Simulation of Semiconductor Processes and Devices). doi: 10.1109/SISPAD.2015.7292342

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

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